GT60N321 EBOOK

Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. Fourth Generation IGBT.

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GT60N – Toshiba – datasheet

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gg60n321 Shipping cost cannot gt60n321 calculated. The gt60n321 does not contain any of the restricted substances in concentrations and applications banned by the Directive, gt60n321 for components, the product is capable of being worked on at the higher temperatures required by lead—free soldering The restricted substances and maximum allowed concentrations in the homogenous material are, by weight: Seller information hongxingshijichip Delivery times may vary, especially during peak periods.

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Report item – gt60n321 in a new window or tab. The IGBT combines the simple gate-drive characteristics of the MOSFETs with gt60n321 high-current and low—saturation-voltage capability of bipolar transistors gt60n321 combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, gt60n321 a single gt60n321.

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