Product Index > Discrete Semiconductor Products > Transistors – IGBTs – Single > Toshiba Semiconductor and Storage GT60N(Q). Obsolete item. Photo Not. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. The 4th. GT60N 1. TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT. GT60N High Power Switching Applications. Fourth Generation IGBT.
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GT60N – Toshiba – datasheet
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Report item – gt60n321 in a new window or tab. The IGBT combines the simple gate-drive characteristics of the MOSFETs with gt60n321 high-current and low—saturation-voltage capability of bipolar transistors gt60n321 combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, gt60n321 a single gt60n321.
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